IPB120N03S4L-03 opti mos ? -t2 power-transistor features ? n-channel - enhancement mode ? automotive aec q101 qualified ? msl1 up to 260c peak reflow ? 175c operating temperature ? green package (lead free) ? 100% avalanche tested maximum ratings, at t j =25 c, unless otherwise specified parameter symbol conditions unit continuous drain current 1) i d t c =25c, v gs =10v 120 a t c =100c, v gs =10v 2) 88 pulsed drain current 2) i d,pulse t c =25c 480 avalanche energy, single pulse e as i d =60a 75 mj avalanche current, single pulse i as - 120 a gate source voltage v gs 16 v power dissipation p tot t c =25c 79 w operating and storage temperature t j , t stg -55 ... +175 c iec climatic category; din iec 68-1 55/175/56 value v ds 30 v r ds(on),max 3 m w i d 120 a product summary pg-to263-3-2 type package ordering code marking IPB120N03S4L-03 pg-to263-3-2 - 4n03l03 rev. 1.1 page 1 2014-04-28
IPB120N03S4L-03 parameter symbol conditions unit min. typ. max. thermal characteristics 2) thermal resistance, junction - case r thjc - - 1.9 k/w thermal resistance, junction - ambient, leaded r thja - - 62 smd version, device on pcb r thja minimal footprint - - 62 6 cm 2 cooling area 3) - - 40 electrical characteristics, at t j =25 c, unless otherwise specified static characteristics drain-source breakdown voltage v (br)dss v gs =0v, i d = 1ma 30 - - v gate threshold voltage v gs(th) v ds = v gs , i d =40a 1.0 1.6 2.2 zero gate voltage drain current i dss v ds =30v, v gs =0v, t j =25c - - 1 a v ds =30v, v gs =0v, t j =125 c 2) - - 100 gate-source leakage current i gss v gs =16v, v ds =0v - - 100 na drain-source on-state resistance r ds(on) v gs =4.5v, i d =60a - 3.7 5.1 m w drain-source on-state resistance r ds(on) v gs =10v, i d =100a - 2.6 3 m values rev. 1.1 page 2 2014-04-28
IPB120N03S4L-03 parameter symbol conditions unit min. typ. max. dynamic characteristics 2) d-85579 neubiberg input capacitance c iss - 4100 5300 pf output capacitance c oss - 900 1200 reverse transfer capacitance c rss - 45 90 turn-on delay time t d(on) - 7 - ns rise time t r - 24 - turn-off delay time t d(off) - 21 - fall time t f - 34 - gate charge characteristics 2) gate to source charge q gs - 13 17 nc gate to drain charge q gd - 8 16 gate charge total q g - 55 72 gate plateau voltage v plateau - 3.3 - v reverse diode diode continous forward current 2) i s - - 120 a diode pulse current 2) i s,pulse - - 480 diode forward voltage v sd v gs =0v, i f =100a, t j =25c - 0.9 1.3 v reverse recovery time 2) t rr v r =15v, i f = i s , d i f /d t =100a/s - 85 - ns reverse recovery charge 2) q rr - 150 - nc 2) defined by design. not subject to production test. 3) device on 40 mm x 40 mm x 1.5 mm epoxy pcb fr4 with 6 cm2 (one layer, 70 m thick) copper area for drain connection. pcb is vertical in still air. 1) current is limited by bondwire; with an r thjc = 1.9k/w the chip is able to carry 124a at 25c. t c =25c values v gs =0v, v ds =25v, f =1mhz v dd =15v, v gs =10v, i d =120a, r g =3.5 w v dd =24v, i d =120a, v gs =0 to 10v rev. 1.1 page 3 2014-04-28
IPB120N03S4L-03 1 power dissipation 2 drain current p tot = f( t c ); v gs 6 v i d = f( t c ); v gs 6 v 3 safe operating area 4 max. transient thermal impedance i d = f( v ds ); t c = 25 c; d = 0 z thjc = f( t p ) parameter: t p parameter: d = t p / t 1 s 10 s 100 s 1 ms 1 10 100 1000 0.1 1 10 100 v ds [v] i d [a] limited by on-state resistance single pulse 0.01 0.05 0.1 0.5 10 1 10 0 10 -1 10 -2 t p [s] z thjc [k/w] 0 10 20 30 40 50 60 70 80 90 0 50 100 150 200 t c [c] p tot [w] 0 20 40 60 80 100 120 140 0 50 100 150 200 t c [c] i d [a] rev. 1.1 page 4 2014-04-28
IPB120N03S4L-03 5 typ. output characteristics 6 typ. drain-source on-state resistance i d = f( v ds ); t j = 25 c r ds(on) = ( i d ); t j = 25 c parameter: v gs parameter: v gs 7 typ. transfer characteristics 8 typ. drain-source on-state resistance i d = f( v gs ); v ds = 6v r ds(on) = f( t j ); i d = 100 a; v gs = 10 v parameter: t j i d = 60 a; v gs = 4.5 v 1 2 3 4 5 6 -60 -20 20 60 100 140 180 t j [c] r ds(on) [m w ] 4.5 v 10 v -55 c 25 c 175 c 0 40 80 120 160 200 240 280 320 360 400 440 480 1 2 3 4 5 6 v gs [v] i d [a] 3 v 4 v 5 v 10 v 5.5 v 4.5 v 3.5 v 0 40 80 120 160 200 240 280 320 360 400 440 480 0 2 4 6 8 v ds [v] i d [a] 5 v 5.5 v 6 v 8 v 10 v 2.5 3 3.5 4 0 20 40 60 80 100 120 i d [a] r ds(on) [m w ] 4.5 v rev. 1.1 page 5 2014-04-28
IPB120N03S4L-03 9 typ. gate threshold voltage 10 typ. capacitances v gs(th) = f( t j ); v gs = v ds c = f( v ds ); v gs = 0 v; f = 1 mhz parameter: i d 11 typical forward diode characteristicis 12 typ. avalanche characteristics if = f(v sd ) i as = f( t av ) parameter: t j parameter: t j(start) 25c 100c 150c 1 10 100 1000 1 10 100 1000 t av [s] i av [a] 25 c 175 c 10 3 10 2 10 1 10 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 v sd [v] i f [a] ciss coss crss 10 3 10 2 10 10 1 0 5 10 15 20 25 30 v ds [v] c [pf] 40a 400a 0 0.25 0.5 0.75 1 1.25 1.5 1.75 2 -60 -20 20 60 100 140 180 t j [c] v gs(th) [v] rev. 1.1 page 6 2014-04-28
IPB120N03S4L-03 13 typical avalanche energy 14 typ. drain-source breakdown voltage e as = f( t j ) v br(dss) = f( t j ); i d = 1 ma parameter: i d 15 typ. gate charge 16 gate charge waveforms v gs = f( q gate ); i d = 80 a pulsed parameter: v dd 27 28 29 30 31 32 33 34 35 -60 -20 20 60 100 140 180 t j [c] v br(dss) [v] 8 v 24 v 0 1 2 3 4 5 6 7 8 9 10 0 10 20 30 40 50 q gate [nc] v gs [v] 30 a 60 a 120 a 0 50 100 150 200 25 75 125 175 t j [c] e as [mj] v gs q gate q gs q gd q g v gs q gate q gs q gd q g rev. 1.1 page 7 2014-04-28
IPB120N03S4L-03 published by infineon technologies ag am campeon 1-12 d-85579 neubiberg ? infineon technologies ag 2014 all rights reserved. attention please! the information herein is given to describe certain components and shall not be considered as a guarantee of characteristics. terms of delivery and rights to technical change reserved. we hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. information for further information on technology, delivery terms and conditions and prices, please contact your nearest infineon technologies office (www.infineon.com) warnings due to technical requirements, components may contain dangerous substances. for information on the types in question, please contact your nearest infineon technologies office. infineon technologies' components may only be used in life-support devices or systems with the expressed written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered. rev. 1.1 page 8 2014-04-28
IPB120N03S4L-03 revision history version revision 1.0 revision 1.1 date 21.10.2013 28.04.2014 changes final datasheet changed capacitances and gate charge rev. 1.1 page 9 2014-04-28
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